Dresden 2009 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 22: Focused Session: Epitaxial Graphene III
O 22.5: Vortrag
Dienstag, 24. März 2009, 12:00–12:15, SCH 251
In-situ Raman spectroscopy and In-situ optical microscopy of graphene growth on polycrystalline nickel — •Stefan Thiele1, Mario Hofmann1, Kyeong-Jae Lee1, Hootan Fahrhat1, Alfonso Reina1, Juergen A. Schaefer2, and Jing Kong1 — 1Department of Materials Science and Engineering, Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA — 2Institut für Physik and Institut für Mikro- und Nanotechnologien, Technische Universität Ilmenau, P. O. Box 100565, 98684 Ilmenau, Germany
Due to our experience in nanotube growth, two modes of graphene growth on polycr. Ni should be possible [1]. It is possible that graphene growth is starting immediately after hydrocarbon gas injection [2] similar to the carbon nanotube growth or carbon atoms could dissolve into nickel and graphene is only growing when the carbon is precipitating out of the nickel during the cool down [3].We used In-situ Raman spectroscopy and In-situ optical microscopy to investigate the large area graphene growth on polycrystalline nickel substrates [1] to proof one of the above theories. For the period of our growth process at high temperatures no Raman signal of graphene was detected. During the cool down process we observed an increasing film growth in the temperature range of 800- 900°C and subsequently a rising Raman signal, which is not changed significantly at lower temperatures. Further details will be discussed at the conference. [1] A. Reina et al., Nanoletters, in press,[2] Qingkai Yu et al., APL 93, 113103 (2008), [3] S. Moshkalyov et al., Mat. Sci. Eng. B 112, 147 (2004)