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Dresden 2009 – scientific programme

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O: Fachverband Oberflächenphysik

O 27: Poster Session I (Methods: Scanning probe techniques; Methods: Atomic and electronic structure; Methods: Molecular simulations and statistical mechanics; Oxides and Insulators: Clean surfaces; Oxides and Insulators: Adsorption; Oxides and Insulators: Epitaxy and growth; Semiconductor substrates: Clean surfaces; Semiconductor substrates: Epitaxy and growth; Semiconductor substrates: Adsorption; Nano- optics of metallic and semiconducting nanostructures; Electronic structure; Methods: Electronic structure theory; Methods: other (experimental); Methods: other (theory); Solutions on surfaces; Epitaxial Graphene; Surface oder interface magnetism; Phase transitions; Time-resolved spectroscopies)

O 27.101: Poster

Tuesday, March 24, 2009, 18:30–21:00, P2

How does graphene grow? Easy access to well-ordered graphene monolayers — •Frank Müller1, Hermann Sachdev2, Stefan Hüfner1, Andrew J. Pollard3, Edward W. Perkins3, James C. Russell3, Peter H. Beton3, Stefan Gsell4, Matthias Schreck4, and Bernd Stritzker41Institut für Experimentalphysik, Universität des Saarlandes, 66041 Saarbrücken, Germany — 2Institut für Anorganische Chemie, Universität des Saarlandes, 66041 Saarbrücken, Germany — 3School of Physics and Astronomy, University of Nottingham, NG7 2RD, UK — 4Institut für Physik, Universität Augsburg, 86135 Augsburg, Germany

In the present study [1], the selective formation of large-scale graphene layers on a Rh-YSZ-Si(111) multilayer substrate by a surface-induced chemical growth mechanism was investigated using low energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), x-ray photoelectron diffraction (XPD) and scanning tunnelling microscopy (STM). It is shown that well-ordered graphene layers can be grown using simple and controllable procedures. In addition, temperature dependent experiments provide insight into the details of the growth mechanisms. A comparison of different precursors shows that a mobile dicarbon species (e.g. C2H2 or C2) acts as a common intermediate for graphene formation. These new approaches offer a scalable approach for the large scale production of high-quality graphene layers on silicon based multilayer substrates.

[1] F. Müller, EU-STREP (Specific Targeted Research Project) NanoMesh, Final Meeting, Orscholz, Germany 2008, in submission

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