Dresden 2009 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 27: Poster Session I (Methods: Scanning probe techniques; Methods: Atomic and electronic structure; Methods: Molecular simulations and statistical mechanics; Oxides and Insulators: Clean surfaces; Oxides and Insulators: Adsorption; Oxides and Insulators: Epitaxy and growth; Semiconductor substrates: Clean surfaces; Semiconductor substrates: Epitaxy and growth; Semiconductor substrates: Adsorption; Nano- optics of metallic and semiconducting nanostructures; Electronic structure; Methods: Electronic structure theory; Methods: other (experimental); Methods: other (theory); Solutions on surfaces; Epitaxial Graphene; Surface oder interface magnetism; Phase transitions; Time-resolved spectroscopies)
O 27.102: Poster
Dienstag, 24. März 2009, 18:30–21:00, P2
Low-temperature elastic and inelastic Scanning Tunnelling Spectroscopy on monolayer graphene on SiC — •Carsten Tröppner1, Norbert Maurer1, Florian Speck2, Thomas Seyller2, and M. Alexander Schneider1 — 1Lehrstuhl für Festkörperphysik, Universität Erlangen-Nürnberg, Staudtstr. 7, 91058 Erlangen — 2Lehrstuhl für Technische Physik, Universität Erlangen-Nürnberg, Erwin-Rommel-Str. 1, 91058 Erlangen
We employ Scanning Tunneling Spectroscopy in liquid Helium to investigate the electronic structure of a monolayer graphene grown epitaxially on SiC(0001). Spatially resolved differential conductance maps reveal a richness of features that can partially attributed to the SiC/graphene interface. Area averages of such maps reveal a "standard" spectrum that agrees with spectra obtained in UHV [1]. Furthermore clear evidence for inelastic (phononic) contributions in the differential conductance of the tunnelling junction are found, offering a natural interpretation for the observed "zero bias anomalies" [2]. The spatial dependence of these features is discussed.
[1] P. Lauffer, et al. Phys. Rev. B 77, 155426 (2008) [2] V.W. Brar et al. Appl. Phys. Lett. 91, 122102 (2007)