Dresden 2009 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 27: Poster Session I (Methods: Scanning probe techniques; Methods: Atomic and electronic structure; Methods: Molecular simulations and statistical mechanics; Oxides and Insulators: Clean surfaces; Oxides and Insulators: Adsorption; Oxides and Insulators: Epitaxy and growth; Semiconductor substrates: Clean surfaces; Semiconductor substrates: Epitaxy and growth; Semiconductor substrates: Adsorption; Nano- optics of metallic and semiconducting nanostructures; Electronic structure; Methods: Electronic structure theory; Methods: other (experimental); Methods: other (theory); Solutions on surfaces; Epitaxial Graphene; Surface oder interface magnetism; Phase transitions; Time-resolved spectroscopies)
O 27.53: Poster
Dienstag, 24. März 2009, 18:30–21:00, P2
Surface Characterisation of GaSb-films grown by MOCVD — •Andreas Seemayer1, Alexander Hommes1, Sascha Hümann2, Dirk Vogel2, Stephan Schulz3, and Klaus Wandelt1 — 1Institute for Physical Cchemistry, University of Bonn, Germany — 2Max Planck Institut für Eisenforschung, Düsseldorf, Germany — 3Department of Chemistry, University of Essen, Germany
III-V semiconductor films used for opto- and microelectronic devices have traditionally been grown by (MO)MBE and LPE processes. An alternative metal-organic CVD-process, which has been established in the last two decades for high-throughput and low-cost fabrication works for nitrides, phosphides and arsenides, but is problematic for antimonides. In particular, for GaSb films an alternative route is a CVD-process using the heterocyclic single source precursor [tBu2 GaSb Et2]2.
Subject of the present work is the gas phase behaviour of the used precursor under UHV conditions and the surface characterisation of thin GaSb-films, which were grown in a self-made HV-MOCVD reactor on Si(001), by AES, S-XPS and AFM. The results are discussed in terms of a correlation of the electronic properties with the composition and structure of the films.