Dresden 2009 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 29: Nanostructures at surfaces: preparation
O 29.3: Vortrag
Mittwoch, 25. März 2009, 11:00–11:15, SCH A01
Selective adsorption of C60 on Si/Ge nanostructures — Konstantin Romanyuk, •Vasily Cherepanov, and Bert Voigtländer — Institute of Bio- und Nanosystems (IBN) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich, D-52425 Jülich, Germany
The similar nature of Si and Ge allows to grow epitaxial Si/Ge nanostructures using a surfactant like Bi to suppress Si-Ge intermixing. Those Si/Ge structures with an atomically sharp interface are suited to be used as templates for a next step of self-organized growth of a different material which selectively bonds to Si or Ge. For instance adsorption of organic molecules only on Si or Ge areas of the surface may lead to a desired fictionalization of the surface. We have explored a chemical selectivity for C60 deposition on Bi covered surface containing Si and Ge areas. It is found that molecules of C60 selectively adsorb on the Ge area substituting Bi atoms of the termination layer. Interestingly, this process is fully reversible. The C60 molecules desorb from the surface under Bi flux thereby restoring initial structure of the template surface. The obtained selectivity for adsorption of C60 gives new challenging opportunities for a successive fabrication of Si/Ge based nanostructures.