Dresden 2009 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 42: Poster Session II (Nanostructures at surfaces: arrays; Nanostructures at surfaces: Dots, particles, clusters; Nanostructures at surfaces: Other; Nanostructures at surfaces: Wires, tubes; Metal substrates: Adsorption of O and/or H; Metal substrates: Clean surfaces; Metal substrates: Adsorption of organic/bio moledules; Metal substrates: Solid-liquid interfaces; Metal substrates: Adsorption of inorganic molecules; Metal substrates: Epitaxy and growth; Heterogeneous catalysis; Surface chemical reactions; Ab-initio approaches to excitations in condensed matter; Organic, polymeric, biomolecular films– also with adsorbates; Particles and clusters)
O 42.71: Poster
Mittwoch, 25. März 2009, 17:45–20:30, P2
Homoepitaxial electrodeposition on Cu(001) in different electrolytes — •Arne Drünkler, Frederik Golks, Yvonne Gründer, Daniel Kaminski, Klaus Krug, Jochim Stettner, and Olaf M. Magnussen — Christian-Albrechts Universität Kiel, Germany
Cu electrodeposition is used for the defect-free filling of trenches with dimensions <100nm on ultra large scale integrated (ULSI) microchips [1]. Multicomponent electrolytes containing organic additives are used cause a faster growth at the bottom of the trench than at the upper walls resulting in void free filling of the trench. Even though the influence of the additives combination on the shape evolution of the Cu deposit was subject of numerous studies [2,3], their precise role during the elementary steps of the deposition is largely not understood. Surface X-Ray diffraction (SXRD) is ideal for the investigation of electrochemical metal deposition on atomic scale, as buried interfaces and structural information of the interface are accessible. In a first step the potential dependent interface structure of Cu(001) was investigated in copper free electrolyte. Furthermore, kinetic growth investigations in HCl and H2SO4 solution are presented. Electrodeposition studies of Cu(001) in CuSO4 containing HCl indicated step flow growth over a wide potential regime. In a Cu containing electrolyte mixture of H2SO4 and HCl evidence for a transistion from 2D- to 3D-growth is found.
References: [1] P.C. Andricacos, et al., Electroch.. Microf. 42, 567 (1998), [2] T.P. Moffat, D. Wheeler, M.D. Edelstein, D. Josell, IBM J. Res. Develop. 49, 19 (2005), [3] D. Josell, D. Wheeler, W.H. Huber, T.P. Moffat, Phys. Rev. Lett. 87, 016102-1 (2001)