Dresden 2009 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 5: Nanostructures at surfaces: Wires, tubes
O 5.5: Vortrag
Montag, 23. März 2009, 12:15–12:30, SCH A215
Dysprosium silicide nanowires on Si(557) — •Martin Franz1, Martina Wanke1, Matthias Vetterlein1, Gerd Pruskil1, Christopher Prohl1, Britta Höpfner1, Florian Genz1, Petar Stojanov2, Eric Huwald2, John Riley2, and Mario Dähne1 — 1Institut für Festkörperphysik, Technische Universität Berlin, D-10623 Berlin, Deutschland — 2School of Physics, La Trobe University, Bundoora, VIC 3086, Australia
The structural and electronic properties of self-assembled nanowires on the Si(557) surface have been studied using scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) using a toroidal electron analyser. The Si(557) surface is a vicinal Si(111) surface with a miscut angle of 9.5∘ that facets into (111) and (112) terraces. Different types of nanowires are grown depending on the Dy coverage. At submonolayer coverages, thin semimetallic nanowires with one-dimensional band structure are grown. In contrast, the nanostructures forming at monolayer and multilayer dysprosium coverages exhibit a very different behavior. At these preparation conditions broad nanowires are grown on the Si(111) facets of the Si(557) surface, consisting of DySi2 in the monolayer case and Dy3Si5 in the multilayer case. A two-dimensional metallic band structure is observed which is similar to the corresponding ones of the dysprosium silicides on Si(111). This project was supported by the DFG, project number Da 408/11.