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Verhandlungen
DPG

Dresden 2009 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 8: Focused Session: Epitaxial Graphene I

Montag, 23. März 2009, 11:15–12:45, SCH 251

11:15 O 8.1 Topical Talk: Atmospheric pressure graphitization of SiC: a route towards wafer-size graphene filmsK.V. Emtsev, A. Bostwick, K. Horn, J. Jobst, G.L. Kellog, L. Ley, J.L. McChesney, T. Ohta, S.A. Reshanov, J. Röhrl, E. Rotenberg, A.K. Schmid, D. Waldmann, H.B. Weber, and •Th. Seyller
11:45 O 8.2 Atomic Hole Doping of Graphene — •Isabella Gierz, Christian Riedl, Ulrich Starke, Christian Ast, and Klaus Kern
12:00 O 8.3 Molecular Hole Doping and Band Structure Engineering of Epitaxial Graphene on SiC — •Camilla Coletti, Christian Riedl, Dong Su Lee, Klaus von Klitzing, Jurgen H. Smet, and Ulrich Starke
12:15 O 8.4 Electronic excitations in epitaxial graphene layers grown on SiC(0001) — •Thomas Langer, Herbert Pfnür, Christoph Tegenkamp, Hans Werner Schumacher, and Uwe Siegner
12:30 O 8.5 Raman Spectra of Epitaxial Graphene on SiC and of Epitaxial Graphene Transferred to SiO2Dong Su Lee, •Christian Riedl, Benjamin Krauss, Klaus von Klitzing, Ulrich Starke, and Jurgen H. Smet
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