Dresden 2009 – wissenschaftliches Programm
TT 18.3: Vortrag
Dienstag, 24. März 2009, 14:30–14:45, HSZ 105
Growth and anisotropy of La(O,F)FeAs thin films deposited by pulsed laser deposition — •Elke Backen1, Silvia Haindl1, Tim Niemeier1, Ruben Hühne1, Thomas Freudenberg1, Jochen Werner2, Günter Behr2, Ludwig Schultz1, and Bernhard Holzapfel1 — 1IFW Dresden, Institute for Metallic Materials, P.O. Box 270116, D-01171 Dresden, Germany — 2IFW Dresden, Institute for Solid State Research, P.O. Box 270116, D-01171 Dresden, Germany
LaFeAsO1−xFx thin films were deposited successfully on (001)-oriented LaAlO3 and MgO substrates from stoichiometric LaFeAsO1−xFx polycrystalline targets with fluorine concentrations up to x = 0.25 by pulsed laser deposition (PLD). Room temperature deposition and post annealing yield films with a pronounced c-axis texture and a strong biaxial in-plane orientation. Transport measurements show metallic resistance and onset of superconductivity at 11 K. µ0Hc2(T) was determined by resistive measurements and yield µ0Hc2 values of 3 T at 3.6 K for the perpendicular field direction and 6 T at 6.4 K for the parallel field direction to the sample surface.