München 2009 – wissenschaftliches Programm
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T: Fachverband Teilchenphysik
T 57: Halbleiterdetektoren 3
T 57.6: Vortrag
Mittwoch, 11. März 2009, 18:00–18:15, A125
Temperature and Frequency Dependence of Electrical Parameters of Irradiated Silicon Diodes — •Volodymyr Khomenkov, Doris Eckstein, and Eckhart Fretwurst — Institute for Experimental Physics, Hamburg, Germany
At the planned upgrade of the LHC to the SLHC a fluence increase of about factor of 10 is expected to a level of about Φeq=1016cm−2 for the innermost radii of the tracking detector. The important parameters characterising the radiation hardness of silicon materials are full depletion voltage (Vfd), leakage current (Id) and charge collection efficiency (CCE). These are extracted through CV and IV as well as charge collection measurements. For CV/IV characterization of irradiated silicon detectors a standard temperature of 20∘C and frequency of 10 kHz are adopted. However, in order to decrease high leakage currents at high irradiation level it is necessary to perform measurements at lower temperature. The obtained values Vfd and Id depend on the temperature and frequency, as well as on material and radiation type and the fluence. To study this dependence CV/IV measurements in the temperature range from -10∘C to 20∘C and in the frequency range from 100 Hz to 100 kHz, as well as charge collection measurements were performed for epitaxial and MCz silicon diodes after irradiation with 24 GeV/c protons and reactor neutrons of different fluences. Isothermal annealing was performed at 80∘C.