Bonn 2010 – wissenschaftliches Programm
HK 48.2: Vortrag
Donnerstag, 18. März 2010, 14:15–14:30, HG VIII
Radiation Studies on the UMC 180 nm CMOS Process at GSI — •Sven Löchner, Harald Deppe, and Holger Flemming — GSI Helmholtzzentrum für Schwerionenforschung GmbH, Experiment Elektronik ASIC-Design, Darmstadt, GERMANY
Radiation damages to electronic components are an important issue for the future experiments at the new Facility for Antiproton and Ion Research (FAIR). One of the preferred technologies of the CBM collaboration for ASIC developments is the 180 nm UMC CMOS process. In this regard the ASIC design group of the GSI Experiment Electronic department has been launched a research project, including the development of an ASIC called GRISU. The main goal is the characterisation of Single Event Effects (SEE) and Total Ionising Dose effects (TID) on the 180 nm UMC process as well as the installation of different testing sites for heavy ion irradiation at the GSI linear accelerator.
Within the talk a short overview of the GRISU test ASIC is given. Thereafter the different SEE testing possibilities for ASIC chips with the GSI heavy ions accelerator are briefly outlined. Finally some test results for SEE measurements as well as TID degradation and annealing are reported.