Bonn 2010 – wissenschaftliches Programm
HK 53.5: Vortrag
Donnerstag, 18. März 2010, 17:45–18:00, HG IV
DSSD Prototyping for the EXL experiment at FAIR — •B. Streicher — GSI, Darmstadt
Prototype double-sided silicon detectors (DSSD) produced in PTI St. Petersburg (Russia) were tested for the use as the tracking and telescopic detectors in EXL in the future facility FAIR. The spectroscopic properties and performance of 16x16 and 64x64(16) DSSDs were studied using 241Am alpha sources, with special emphasis on interstrip characteristics, using particle implantation from both, the junction and ohmic side. These detectors were used in telescope-like configurations for proton energy reconstruction in two experiments per*formed at KVI Groningen and GSI Darmstadt. Design of a unique readout board for the new generation of 128x64 DSSDs using semiconductor probes technology will be described. Details of testing a set-up suitable for ESR vacuum conditions using DSSDs as an UHV window will also be presented.