Bonn 2010 – wissenschaftliches Programm
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T: Fachverband Teilchenphysik
T 61: Halbleiterdetektoren IV
T 61.1: Vortrag
Donnerstag, 18. März 2010, 16:45–17:00, HG ÜR 5
SiMPl - High efficient Silicon Photomultipliers with integrated bulk resistor — •Christian Jendrysik1, Ladislav Andricek1, Gerhard Liemann1, Gerhard Lutz2, Hans-Günther Moser1, Jelena Ninkovic1, and Rainer Richter1 — 1Max Planck Institute for Physics, Semiconductor Laboratory, Munich, Germany — 2PN Sensor GmbH, Munich, Germany
Silicon photomultipliers (SiPM) are avalanche photodetectors which tend to replace conventional photomultiplier tubes in many application areas where detectors with high photon detection efficiency (PDE) are in the focus of interest. For Geiger mode operation high ohmic polysilicon is needed as quench resistor. On the one hand this forms a barrier for incident light, thus decreasing the PDE, which is a crucial point at low light levels. On the other hand it's also the most cost driving technological issue in fabrication.
We present a novel design for a high efficient SiPM with the quench resistors integrated into the silicon bulk. Therefore obstacles for light like metal lines or contacts within the active area can be omitted and the fill factor of the device is only limited by the gaps necessary for optical crosstalk suppression. First results of this novel light detector will be presented.