Regensburg 2010 – scientific programme

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DS: Fachverband Dünne Schichten

DS 15: [HL] Organic Semiconductors: Transistors and OLEDs (Joint Session DS/CPP/HL/O)

DS 15.1: Talk

Tuesday, March 23, 2010, 09:30–09:45, H15

Ionic liquid gated polymer transistor — •Johannes Schöck, Daniel Secker, and Heiko B. Weber — Lehrstuhl für Angewandte Physik, Universität Erlangen-Nürnberg, Staudtstr. 7/A3, D-91058 Erlangen, Germany

We fabricate field-effect transistors with a polymer semiconductor using an ionic liquid top-gate, replacing the gate insulator. The geometry is bottom contact, liquid top gate. Electrical characterization yields a low conductance threshold of the device (∼ −2.5 V), and a steep increase of the source-drain current. An analysis points towards unusually high charge carrier mobility of the semi-conducting channel, with very favorable leakage currents through the gate. Strong hysteretic effects are observed.