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Regensburg 2010 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 23: High-k and Low-k Dielectrics I (Joint Session DS/DF)

DS 23.1: Vortrag

Mittwoch, 24. März 2010, 09:30–09:45, H8

Spectroscopic investigations of interaction between C60 fullerene and nitrogen atom from amine group — •Jolanta Klocek1, Daniel Friedrich1, Kostyantyn Zagorodniy2, and Dieter Schmeisser11Brandenburgische Technische Universität, LS Angewandte Physik-Sensorik, Konrad-Wachsmann-Allee, 17, 03046, Cottbus, Germany — 2Institute for Solid State and Materials Research, IFW Dresden, PF 270116, D-01171 Dresden, Germany

We investigated interactions between fullerene molecule and amine group from 3-aminopropyl-trimethoxysilane (3AT). Theoretical calculations show that the material obtained as a result of interactions between 3AT and C60 fullerene may have extremely low dielectric constant around 1.6, so it could be considered as a candidate for ultra low-k (ULK) material applications. We prepared films composed of 3AT and fullerene by using two preparation techniques: spin-coating and evaporation. Interactions between these two components were investigated by using X- ray photoelectron spectroscopy (XPS) and Near Edge X-ray Absorption Fine Structure Spectroscopy (NEXAFS). We found that there are strong chemical reactions between the nucleophilic nitrogen atom from 3AT and electrophilic fullerene molecule. Results of NEXAFS measurements suggest that due to direct interactions between 3AT and C60 the shape of fullerene molecule is changed.


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