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Regensburg 2010 – scientific programme

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DS: Fachverband Dünne Schichten

DS 36: Thin Film Characterisation: Structure Analyse and Composition (XRD, TEM, XPS, SIMS, RBS, ...) I

DS 36.3: Talk

Thursday, March 25, 2010, 10:00–10:15, H8

Surface characterization after subaperture Reactive Ion Beam Etching — •André Miessler, Thomas Arnold, and Bernd Rauschenbach — Leibniz-Institut für Oberflächenmodifizierung (IOM), Permoserstrasse 15, D-04318Leipzig, Germany

In usual ion beam etching processes using inert gas (Ar, Xe, Kr...) the material removal is determined by physical sputtering effects on the surface. The admixture of suitable gases (CF4 + O2) into the glow discharge of the ion beam source leads to the generation of reactive particles, which are accelerated towards the substrate where they enhance the sputtering process by formation of volatile chemical reaction products.

During the last two decades research in Reactive Ion Beam Etching (RIBE) has been done using a broad beam ion source which allows the treatment of smaller samples (diameter sample < diameter beam). Our goal was to apply a sub-aperture Kaufman-type ion source in combination with an applicative movement of the sample with respect to the source, which enables us to etch areas larger than the typical lateral dimensions of the ion beam. Concerning this matter, the etching behavior in the beam periphery plays a decisive role and has to be investigated. We use interferometry to characterize the final surface topography and XPS measurements to analyze the chemical composition of the samples after RIBE.

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