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Regensburg 2010 – scientific programme

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DS: Fachverband Dünne Schichten

DS 9: Poster: Synthesis of Nanostructured Films by Self-organization, Thermoelectric Thin Films and Nanostructures, High-k and Low-k Dielectrics, Layer Deposition Processes, Layer Growth, Layer Properties, Application of Thin Films, Surface Modification, Hard and Superhard Coatings, Metal Layers

DS 9.7: Poster

Monday, March 22, 2010, 15:00–17:30, Poster D1

Condensation of silicon monoxide on Si(111) studied by infrared spectroscopy for different substrate temperaturesSteffen Wetzel, •Markus Klevenz, and Annemarie Pucci — Kirchhoff-Institut für Physik der Universität Heidelberg, INF 227, 69120 Heidelberg

The growth of thermally evaporated silicon monoxide (SiO) on a Si(111) surface was studied in situ by infrared spectroscopy under ultra-high vacuum conditions. Within the first stage of film growth a large shift of the main vibrational band from 864 cm−1 to the bulk value of 984 cm−1 was observed (at 300K). This effect can be assigned to different Si-O bond lengths of Si-O-Si bridges nearby the Si surface in comparison to the bulk material and was successfully modelled with an SiOx (0<x<1) interlayer. Measurements at various substrate temperatures also reveal a clear shift of the vibrational peak position; below 300 K to lower wave numbers with decreasing substrate temperature and above 300 K to higher wavenumbers with increasing substrate temperature, respectively. For higher temperatures disproportioning of SiO into Si and SiO2 becomes important whereas for the very low temperatures only the bonding geometry should be important. Both effects will be discussed in detail.

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