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Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 10: Devices II

Monday, March 22, 2010, 14:00–15:45, H13

14:00 HL 10.1 Ballistic rectification in an asymmetric Si/SiGe cross junction with modulated electron density — •Daniel Salloch, Ulrich Wieser, Ulrich Kunze, and Thomas Hackbarth
14:15 HL 10.2 Dot-Field Effect Transistor: Using locally strained silicon for MOSFET applications — •Jürgen Moers, Julian Gerharz, Gregor Mussler, Cleber Biasotto, Vladimir Jovanovic, Lis Nanver, and Detlev Grützmacher
14:30 HL 10.3 Ammonium hydroxide (NH4OH) as etch-stop chemical for highly boron-doped silicon δ-layers — •Oliver Hammer, Florian Palitschka, Helmut Lochner, Tina Kubot, Dorota Kulaga-Egger, Daniel Beckmeier, Carolin Axt, Josef Biba, Ronny Schindler, Marc Dressler, Torsten Sulima, and Walter Hansch
14:45 HL 10.4 Interface Defect Study by GIDL Current and Charge Pumping Measurements on MOSFET Devices — •Guntrade Roll, Stefan Jakschik, Andre Wachowiak, Matthias Goldbach, and Lothar Frey
15:00 HL 10.5 Application of a parameter extraction method for MOSFETs — •Josef Biba, Dorota Kułaga-Egger, Torsten Sulima, and Walter Hansch
15:15 HL 10.6 Electrical characterization of doped semiconductor nanostructures with Scanning Microwave Microscopy — •Matthias A. Fenner, Hassan Tanbakuchi, Stephan Streit, Christine Baumgart, Manfred Helm, and Heidemarie Schmidt
15:30 HL 10.7 VLS-grown Vertical Silicon Nanowire FETs — •Hesham Ghoneim, Mikael Bjoerk, Heinz Schmid, Kirsten Moselund, Siegfried Karg, Walter Riess, and Heike Riel
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