Regensburg 2010 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 24: Quantum Dots and Wires, Optical Properties II: Single Photon Sources

HL 24.3: Vortrag

Dienstag, 23. März 2010, 12:00–12:15, H17

Triggered single–photon emission from electrically driven InP/(Al,Ga)InP quantum dots — •Christian Kessler, Matthias Reischle, Wolfgang-Michael Schulz, Marcus Eichfelder, Robert Roßbach, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany

Semiconductor quantum dots (QDs) are a promising approach to realize a single–photon source. To avoid bulky and expensive laser systems for future applications, electrical excitation is desirable. InP QDs are especially suited, as they emit in the red spectral range and therefore in the optimal range of commercial detectors. Additionally, they have been shown to be capable of emitting single photons up to 80 K [1]. Thus, we embedded InP QDs in the intrinsic region of a p–i–n diode. To form single devices, 100 µm mesas were etched and supplied with electrical contacts. We investigated the electroluminescence from single QDs and performed second-order auto correlation measurements to verify single–photon emission. To prevent expensive helium cooling and reach operation above 80 K, we investigated the influence of elevated temperature on the performance of our device. Since triggered single–photon emission is required for most applications, sub–nanosecond pulses were applied and pulsed single-photon (g(2)(0)=0.24) emission was observed up to 200 MHz.

[1] M. Reischle et al., Opt. Express 16, 12771 (2008)

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