DPG Phi
Verhandlungen
Verhandlungen
DPG

Regensburg 2010 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 41: Quantum Dots and Wires: Preparation and Characterization II

HL 41.7: Talk

Wednesday, March 24, 2010, 12:30–12:45, H13

Investigating Axial Zinc Doping Profile in Galliumarsenide Nanowires with Kelvin Force Microscopy and Scanning Microwave Microscopy — •Matthias Fenner1, Hassan Tanbakuchi1, C. Gutsche2, A. Lysov2, I. Rgolin2, W. Prost2, and F.-J. Tegude21Agilent Technologies, Campus Kronberg, 61476 Kronberg, Germany — 2Center for Nanointegration, University of Duisburg-Essen, Duisburg, Germany

Nanowires with a nominal change of the doping along the nanowire axis were grown. Fabrication of high quality doping and material transitions is well established in bulk semiconductors. This is callenging especially for III-V nanowires, where a complete model of the vapour-liquid-solid (VLS) growth mechanism is still pending. We employed two atomic force microscopy (AFM) methods for dopant profiling of GaAs nano wires: Kelvin Force Microscopy (KFM) and Scanning Microwave Microscopy (SMM). KFM indirectly measures the dopant density via the surface potential [1, 2]. SMM measures the capacitance of the tip sample junction with resolutions in the attofarad and nanometer range. By means of a local capacitance spectroscopy method (dC/dV) SMM directly maps the dopant density in semiconductors [3]. The two methods show transitions from undoped to doped regions in the nanowires as well as gradients along the axis of the wires.

[1] C. Baumgart, M. Helm, H. Schmidt, Phys. Rev. B 80, 085305 (2009). [2] S. Vinaji et al., Nanotechnology 20 (2009) [3] F. Michael Serry, Agilent Application Note 5989-8818EN, http:// cp.literature.agilent.com/litweb/pdf/5989-8818EN.pdf, 2008.

100% | Mobile Layout | Deutsche Version | Contact/Imprint/Privacy
DPG-Physik > DPG-Verhandlungen > 2010 > Regensburg