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Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 48: Semiconductor Lasers

HL 48.7: Talk

Thursday, March 25, 2010, 11:15–11:30, H13

Two-section DBR lasers based on surface defined gratings for high-speed applications — •Sohaib Afzal1, Florian Schnabel1, Wenzel Scholz1, Johann Peter Reithmaier1, Gadi Eisenstein2, Amir Capua2, Evgeny Shumakher2, Petri Melanen3, and Ville Vilokkinen31Technische Physik, Institute of Nanostructure Technologies and Analytics (INA), Universität Kassel, 34132, Kassel, Germany — 2Technion, Electrical Engineering Department. Technion City Haifa 32000, Israel — 3Modulight Inc. FIN-33720, Tampere, Finland

To realize low-cost high-performance lasers for high-speed optical transmission a new surface-defined grating etching process was developed based on a four gas ICP-RIE etching process, which allow high aspect ratios of > 1:15. The gratings are lithogaphically defined on the sample surface by e-beam lithography, but could be easily adapted by low-cost large volume nanoimprint lithography. The gratings are formed lateral to the ridge in 1st and 2nd order with a trench width of about 120 nm and an etch depth of about 2 um. With this surface defined patterning techique two-section DBR lasers were fabricated on a 1.3 um InP laser material, which exhibit low cw threshold currents down to 8 mA by pumping the grating section at 50 mA (total device length = 900 um). The influence of the grating period and operation temperature on the threshold current and emission wavelength will be discussed. First small signal measurement results show a -3dB bandwidth of 10 GHz with an extrapolated max. bandwidth of about 40 GHz.

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