DPG Phi
Verhandlungen
Verhandlungen
DPG

Regensburg 2010 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 52: Heterostructures

HL 52.10: Talk

Thursday, March 25, 2010, 12:30–12:45, H17

Site-selective molecular beam epitaxial growth of InAs quantum dots on pre-patterned GaAs substrates — •Mathieu Helfrich1,2, Dongzhi Hu2, Joshua Hendrickson3, Daniel Rülke1,4, Pablo Aßhoff1,2,4, Heinz Kalt1,2,4, Michael Hetterich1,2,4, Galina Khitrova3, Hyatt M. Gibbs3, and Daniel M. Schaadt21Institut für Angewandte Physik, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany — 2DFG-Center for Functional Nanostructures, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany — 3College of Optical Sciences, The University of Arizona, Tucson, AZ 85721, USA — 4KSOP - Karlsruhe School of Optics and Photonics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany

Semiconductor quantum dots (QDs) are promising candidates for the realisation of a quantum computer. Integrating QDs into optical resonator structures may be one way to realise such a device. Therefore, it is necessary to fabricate QDs with controllable properties at pre-defined positions. It has been demonstrated that pre-patterning of the substrate offers a tool to achieve good control of QD nucleation sites. However, site-controlled QDs still lack in quality compared to randomly nucleated QDs. Post-growth treatment is believed to enhance the optical properties of site-controlled QDs and is investigated in this study. InAs QDs are grown on pre-patterned GaAs (100) substrates by molecular beam epitaxy and are analysed by atomic force microscopy, scanning electron microscopy and photoluminescence measurements.

100% | Mobile Layout | Deutsche Version | Contact/Imprint/Privacy
DPG-Physik > DPG-Verhandlungen > 2010 > Regensburg