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Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 56: Non- and Semi-polar Group-III-Nitrides

HL 56.1: Talk

Thursday, March 25, 2010, 14:00–14:15, H15

Optical anisotropy of a- and m-plane InN grown on free-standing GaN substrates — •Jochen Räthel1, Pascal Schley1, Egidius Sakalauskas1, Gerhard Gobsch1, René Müller1, Thomas A. Klar1, Jörg Pezoldt1, Rüdiger Goldhahn1, Gregor Koblmüller2,3, James S. Speck2, Matthias Wieneke4, Jürgen Bläsing4, and Alois Krost41Institut für Physik, Technische Universität Ilmenau — 2Materials Department, University of California — 3Walter Schottky Institut, Technische Universität München — 4Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg

The optical response of wurtzite nitride semiconductors at the band gap and in the spectral region of high-energy critical points differs appreciably for light polarization perpendicular (ordinary configuration) and parallel (extraordinary) to the c-axis. In order to demonstrate this effect, films (or bulk crystals) are required for which the optical axis lies in the surface plane (a- or m-plane). For InN, the only studies reported so far employed an a-plane layer deposited on r-plane sapphire with an a-plane GaN buffer. Considerable improvement of the film quality was recently achieved by growing a- and m-plane InN directly on free-standing a- and m-plane GaN by PAMBE. In this contribution, we present a comprehensive characterization of these higher-quality non-polar InN materials by polarization-dependent Raman spectroscopy and ellipsometry. The influence of stress on the transition energies is discussed based on the lattice parameters obtained by high-resolution XRD.

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