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Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 57: Focussed Session: ZnO-based Semiconductors

HL 57.12: Talk

Thursday, March 25, 2010, 17:30–17:45, H17

Spin Coherence in ZnO — •Christoph Schwark1, Vera Klinke1, Gernot Güntherodt1, Matthias Althammer2, Sebastian T.B. Goennenwein2, Matthias Opel2, Rudolf Gross2, Thomas Wassner3, Martin S. Brandt3, and Bernd Beschoten11Physikalisches Institut IIA, RWTH Aachen University, Aachen, and JARA - Fundamentals of Future Information Technology, Germany — 2Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Garching, Germany — 3Walter Schottky Institut, Technische Universität München, Garching, Germany

ZnO is a promising candidate for future spintronic applications due to its wide bandgap and small spin-orbit coupling. Using time resolved Faraday rotation experiments, we have studied the spin dephasing time T2* as a function of temperature in epitaxial ZnO thin films. Two sets of samples were investigated: one set of ZnO films was deposited on sapphire substrates via pulsed laser deposition, the other was grown using plasma-assisted molecular beam epitaxy. At 10 K, we observe spin dephasing times in excess of 20 ns, surpassing all previously reported values in ZnO bulk single crystals and thin films [1]. We will discuss the correlation between the spin dephasing time observed experimentally and the crystalline quality, as well as the evolution of T2* with temperature.

Financial support by DFG through SPP 1285 and by HGF through VISel - Virtual Institute of Spin Electronics is gratefully acknowledged.

[1] Gosh et al., Appl. Phys. Lett 86, 232507 (2005).

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