Regensburg 2010 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 57: Focussed Session: ZnO-based Semiconductors
HL 57.12: Talk
Thursday, March 25, 2010, 17:30–17:45, H17
Spin Coherence in ZnO — •Christoph Schwark1, Vera Klinke1, Gernot Güntherodt1, Matthias Althammer2, Sebastian T.B. Goennenwein2, Matthias Opel2, Rudolf Gross2, Thomas Wassner3, Martin S. Brandt3, and Bernd Beschoten1 — 1Physikalisches Institut IIA, RWTH Aachen University, Aachen, and JARA - Fundamentals of Future Information Technology, Germany — 2Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Garching, Germany — 3Walter Schottky Institut, Technische Universität München, Garching, Germany
ZnO is a promising candidate for future spintronic applications due to its wide bandgap and small spin-orbit coupling. Using time resolved Faraday rotation experiments, we have studied the spin dephasing time T2* as a function of temperature in epitaxial ZnO thin films. Two sets of samples were investigated: one set of ZnO films was deposited on sapphire substrates via pulsed laser deposition, the other was grown using plasma-assisted molecular beam epitaxy. At 10 K, we observe spin dephasing times in excess of 20 ns, surpassing all previously reported values in ZnO bulk single crystals and thin films [1]. We will discuss the correlation between the spin dephasing time observed experimentally and the crystalline quality, as well as the evolution of T2* with temperature.
Financial support by DFG through SPP 1285 and by HGF through VISel - Virtual Institute of Spin Electronics is gratefully acknowledged.
[1] Gosh et al., Appl. Phys. Lett 86, 232507 (2005).