Regensburg 2010 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 60: Poster II: Optical Properties, incl. Photonic Crystals and Ultrafast Phenomena
HL 60.11: Poster
Thursday, March 25, 2010, 18:00–20:00, Poster D1
2D photonic crystals for manipulation of emission of the InGaAs/GaAs — •Sabrina Darmawi1, Torsten Henning1, Peter J. Klar1, Wolfgang Stolz2, Kerstin Volz2, and Sangam Chatterjee2 — 1I. Physikalisches Institut, Justus-Liebig-Universität, Heinrich-Buff-Ring 16, 35392 Gießen — 2FB Physik, Philipps-Universität, Renthof 5, 35032 Marburg
We aim at suppressing local losses in III-V based vertical emitters by using two-dimensional photonic crystals. As a proof of principle we fabricated a hexagonal 2D photonic crystal in GaAs layers and a single InGaAs/GaAs quantum well structure. Electron beam lithography was used to define the pattern. The pattern was transferred into the specimens by wet-chemical etching. The structures obtained were characterized by atomic force microscopy and scanning electron microscopy. The luminescence of the structures with and without 2D photonic crystals will be compared.