DPG Phi
Verhandlungen
Verhandlungen
DPG

Regensburg 2010 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 61: Poster II: Materials, Interfaces and Heterostructures

HL 61.10: Poster

Thursday, March 25, 2010, 18:00–20:00, Poster D1

Fabrication of suspended graphene sheetsBenjamin Söll, Dieter Weiss, and •Jonathan Eroms — Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg

We report the fabrication of single layer graphene devices suspended 150 nm above a Si/SiO2 substrate. Suspension of the graphene flake was achieved by dipping entire conventional devices with gold contacts into buffered oxide etch. Thereby we removed 150 nm of SiO2, including the area underneath the flake, while SiO2 masked by the gold electrodes remained unetched. To dry the samples we used a critical point dryer to avoid the surface-tension-induced collapse of the suspended sheet. After suspending, the devices were baked in forming gas at 200 C for 10 minutes to remove residues left from sample fabrication. Further cleaning was carried out by current induced cleaning in the cryostat, with a typical current of 1mA per µm of sample width. First measurements show an improvement of sample properties after current induced cleaning.

100% | Mobile Layout | Deutsche Version | Contact/Imprint/Privacy
DPG-Physik > DPG-Verhandlungen > 2010 > Regensburg