Regensburg 2010 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 63: III-V Semiconductors
HL 63.8: Talk
Friday, March 26, 2010, 12:15–12:30, H13
Quantitative analysis of III-V on Si(100) anti-phase domains — •Henning Döscher1, Benjamin Borkenhagen2, Peter Kleinschmidt1, Sebastian Brückner1, Anja Dobrich1, Oliver Supplie1, Gerhard Lilienkamp2, Ulrike Bloeck1, Winfried Daum2, and Thomas Hannappel1 — 1Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin — 2IEPT, TU Clausthal, Leibnizstr. 4, 38678 Clausthal-Zellerfeld
GaP growth on Si(100) is considered as an important model system for polar on non-polar epitaxy required for the combination of opto- and microelectronic devices. Anti-phase disorder according to the step structure of the substrate surface prior to III-V deposition has been identified as a major challenge. Destructive techniques such as anisotropic etching or adequate post growth annealing can highlight anti-phase boundaries (APBs) as height contrast. Transmission electron microscopy (TEM) is able to visualize APBs in high resolution images and even anti-phase domains (APDs) directly, if proper dark field imaging conditions are applied.
The influence of anti-phase disorder on surface reconstructions enables alternative concepts for direct APD investigation with non-destructive surface sensitive instruments: Reflectance anisotropy spectroscopy (RAS) integrates over large surface areas (cm scale) and provides a quantitative in situ access to the APD content of a sample. Low-energy electron microscopy (LEEM) allows the lateral resolution of APDs in GaP/Si(100) samples via dark field imaging with related higher order diffraction spots from the surface.