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Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 66: ZnO-based Devices

Friday, March 26, 2010, 10:15–11:15, H17

10:15 HL 66.1 Properties of transparent ZnO-based electronics — •Alexander Lajn, Heiko Frenzel, Holger von Wenckstern, and Marius Grundmann
10:30 HL 66.2 Properties of transparent ZnO inverters under the influence of light and elevated temperature — •Tobias Diez, Alexander Lajn, Heiko Frenzel, Holger von Wenckstern, and Marius Grundmann
10:45 HL 66.3 ZnO-based On-Chip Devices for Cell Potential Measurement — •F. Klüpfel, A. Lajn, H. Frenzel, H. von Wenckstern, G. Biehne, H. Hochmuth, M. Lorenz, and M. Grundmann
11:00 HL 66.4 Appropriate choice of channel ratio in thin-film transistors for the exact determination of field-effect mobility — •Koshi Okamura, Donna Nikolova, Norman Mechau, and Horst Hahn
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