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Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 9: SiC

HL 9.2: Talk

Monday, March 22, 2010, 11:45–12:00, H13

Analysis of the Temperature-Dependence of the Leakage Current of 3C-SiC p+-n Diodes Caused by Extended Defects — •Bernd Zippelius1, Michael Krieger1, Heiko B. Weber1, Gerhard Pensl1, Takamitsu Kawahara2, and Hiroyuki Nagasawa21Lehrstuhl für Angewandte Physik, Universität Erlangen-Nürnberg, Staudtstr. 7/A3, D-91058 Erlangen, Germany — 2SiC Development Center, Hoya Corporation, 1-17-16 Tanashioda, Sagamihara, Kanagawa 229-1125, Japan

A large leakage current (IR) is observed at reverse bias (VR) in 3C-SiC p+-n diodes. This leakage current is caused by a high density of stacking faults (SFs). We used an n-type 3C-SiC epilayer (thickness = 13 µm, [N] = 7 × 1015 cm−3) and implanted Al ions to form the p-emitter (φ = 100 µm), which is surrounded by 6 guard rings (depth = 1 µm, [Al] = 1 × 1018 cm−3). Al contacts are deposited on the emitter. The temperature dependence of IR is studied in the temperature range from 100 K to 295 K. The extended defects under the contacts were investigated by Electron Beam Induced Current (EBIC) and Photo Emission Microscopy (PEM). It turns out that IR is thermally activated for reverse voltages VR < |170| V. We propose that within this voltage range IR originates from thermally assisted tunneling of electrons and holes from band-like states of the SFs into the conduction and valence band, respectively. For VR > |170| V, the thermal barrier is strongly reduced and direct tunneling dominates. These dependences are simulated in the framework of a simplified model which qualitatively describes the temperature behaviour of the experimental data.

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