Regensburg 2010 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
MM: Fachverband Metall- und Materialphysik
MM 41: Topical Session Growth Kinetics II
MM 41.2: Talk
Wednesday, March 24, 2010, 17:30–17:45, H4
Sub-monolayer growth investigations of para-sexiphenyl on sputter-modified mica(001) and SiO2 — •Stefan Lorbek1, Gregor Hlawacek1, Thomas Potocar2, Adolf Winkler2, and Christian Teichert1 — 1Institute of Physics, University of Leoben, 8700 Leoben, Austria — 2Institute of Solid State Physics, Graz University of Technology, 8010 Graz, Austria
Although progress has been made in recent years in the understanding of fundamental growth processes in organic molecular beam epitaxy, the underlying details are still to be explored [1]. Especially, understanding of the island nucleation on the substrate during the deposition of oligomere thin films is crucial for the design of growth routes that will avoid the undesired formation of 3D structures. Here, sub-monolayers of the rod like model molecule para-sexiphenyl (6P) have been deposited onto the isotropic surfaces of SiO2 and pre-ion bombarded mica(001) under ultra-high vacuum resulting in almost upright standing molecules. The film morphology was recorded by ex-situ atomic force microscopy. For the determination of the critical island size i*, films were grown as a function of coverage, surface temperature and evaporation rate. Three different methods were applied to determine i*: (a) Rate theory [2], scaling theory [3] and (c) capture zone scaling using Voronoi tessellation [4]. Funded by FWF(Austria).
[1] G. Hlawacek,et al., Science 321, 108 (2008) [2] J.A. Venables et al., Rep. Progr. Phys.47(1984)399. [3] J.G. Amar,F. Family, Phys. Rev. Lett.74(1995)2006. [4] A. Pimpinelli,T.L. Einstein, Phys.Rev.Lett.99(2007) 226102