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Regensburg 2010 – scientific programme

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O: Fachverband Oberflächenphysik

O 13: Semiconductor substrates: Adsorption

O 13.2: Talk

Monday, March 22, 2010, 15:15–15:30, H34

Thermal stability of ultra-thin ZrO2 films and structure determination of ZrSi2 islands on Si(100) — •Frank Schönbohm1,2, Christian Rolf Flüchter1, Daniel Weier1, Tobias Lühr1, Ulf Berges1,2, Sven Döring1,2, and Carsten Westphal1,21Experimentelle Physik 1 - Technische Universität Dortmund, Otto-Hahn-Str. 4, D-44221 Dortmund, Germany — 2DELTA - Technische Universität Dortmund, Maria-Goeppert-Mayer-Str. 2, D-44221 Dortmund, Germany

The ongoing miniaturisation of semiconductors requires a substitute for the presently used SiO2 gate dielectrics. Below 2 nm film thickness the leakage current increases drastically due to tunneling processes and causes the loss of efficiency. Among the high-k materials HfO2 and ZrO2 might be proper candidates to replace the SiO2. We studied the temperature dependence of thin ZrO2 films on clean silicon by means of x-ray photoelectron spectroscopy (XPS) and photoelectron diffraction (XPD). ZrO2 films with a thickness of approximately 11 Å were grown by electron beam evaporation on a (2×1)-reconstructed Si(100) surface. At annealing temperatures of 650C and above the ZrO2 films were transformed into ZrSi2. The temperature region of structural transformation could be narrowed to the range from 650C to 725C. During the formation of ZrSi2 all oxygen was removed from the sample surface. After annealing at 725C neither zirconia nor silicon oxide could be verified on the sample. From the combined spectroscopy, SEM, and XPD analysis a model for the internal structure of ZrSi2 is proposed.

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