Regensburg 2010 – scientific programme
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O: Fachverband Oberflächenphysik
O 15: Spin-Orbit Interaction at Surfaces II
O 15.9: Talk
Monday, March 22, 2010, 17:00–17:15, H38
Growth and characterization of Bi1−xSbx crystalline films on Si(111) — •Carola Straßer, Hadj Mohamed Benia, Klaus Kern, and Christian R. Ast — Max Planck Institute for Solid State Research, Stuttgart, Germany
Recently, the Bi1−xSbx alloys have been identified as topological insulators for Sb contents larger than 8%. While studies so far have used single crystals, we have grown Bi1−xSbx films on Si(111) with a focus on producing a particularly smooth surface.
The quality of the samples was analyzed using different techniques, such as low energy electron diffraction (LEED), secondary ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). The preparation and optimization of flat and homogenous films will be presented.