DPG Phi
Verhandlungen
Verhandlungen
DPG

Regensburg 2010 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

O: Fachverband Oberflächenphysik

O 48: Surface dynamics I

O 48.5: Talk

Wednesday, March 24, 2010, 11:30–11:45, H40

Momentum dependent electron and hole relaxation dynamics in EuFe2As2 — •L. Rettig1, R. Cortes1, S. Thirupathaiah2, U. Bovensiepen1,3, M. Wolf1, H. A. Duerr2, P. Gegenwart4, T. Wolf5, and J. Fink2,61Freie Universität Berlin, D-14195 Berlin — 2Helmholtz-Zentrum Berlin, D-12489 Berlin — 3Universität Duisburg-Essen, D-47048 Duisburg — 4Georg-August-Universität Göttingen, D-37077 Göttingen — 5Karlsruhe Institute of Technology, D-76021 Karlsruhe — 6Leibniz-Institute for Solid State and Materials Research Dresden, D-01171 Dresden

The influence of the electronic bandstructure on the fundamental relaxation processes of excited carriers leading to intra- and interband scattering is of fundamental interest in solid state physics. Here, we report on fs time- and angle-resolved photoemission spectroscopy (trARPES) on the parent compound EuFe2As2 of the new class of FeAs based high-Tc superconductors. Using intense fs laser pulses (hν=1.5 eV), part of the electronic population is excited to states above the Fermi level. The transient evolution of both occupied and unoccupied states is probed by energy- and angle-resolved photoelectron spectroscopy using a time-delayed ultraviolet pulse (hν=6.0 eV). Upon excitation, occupied states around the hole-pocket at the Γ-point of the Brillouin zone become partially depopulated by excited holes, whereas electrons are filling the empty states within the hole-pocket. The timescales of electron and hole dynamics within this band differ drastically and cannot be explained solely by intraband e-h pair generation, but an additional interband excitation channel has to be considered.

100% | Mobile Layout | Deutsche Version | Contact/Imprint/Privacy
DPG-Physik > DPG-Verhandlungen > 2010 > Regensburg