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Regensburg 2010 – scientific programme

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O: Fachverband Oberflächenphysik

O 82: Graphene IV

Friday, March 26, 2010, 11:15–13:00, H31

11:15 O 82.1 Spin-Splitting of Graphene/Au/SiC investigated with Spin- and Angle-Resolved Photoemission Spectroscopy — •Isabella Gierz, Fabian Meier, Bartosz Slomski, Jan Hugo Dil, Jürg Osterwalder, Christian R. Ast, and Klaus Kern
11:30 O 82.2 High Resolution Electron Energy Loss Spectroscopy on Graphene/SiC(0001) — •Roland J. Koch, Michael Endlich, Thomas Haensel, Syed Imad-U. Ahmed, Thomas Seyller, and Juergen A. Schaefer
11:45 O 82.3 AFM imaging of graphene under ambient conditions — •Michael Enzelberger, Viatcheslav Dremov, Florian Speck, Catharina Knieke, Angela Berger, Thomas Seyller, Wolfgang Peukert, and Paul Müller
12:00 O 82.4 Low Temperature Epitaxial Graphene on SiC by Carbon Deposition — •Ameer Al-Temimy, Christian Riedl, and Ulrich Starke
12:15 O 82.5 Quasi-freestanding Graphene on SiC(0001) — •Florian Speck, Markus Ostler, Jonas Röhrl, Johannes Jobst, Daniel Waldmann, Martin Hundhausen, Lothar Ley, Heiko B. Weber, and Thomas Seyller
12:30 O 82.6 Crystal Symmetry and Stress in Epitaxial Graphene Films — •Diedrich Schmidt and Taisuke Ohta
12:45 O 82.7 Plasmons in epitaxial graphene: influence of steps and doping concentration — •Thomas Langer, Herbert Pfnür, Christoph Tegenkamp, and Hans Werner Schumacher
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