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Regensburg 2010 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 19: CE: Metal-Insulator Transition 2

TT 19.11: Talk

Wednesday, March 24, 2010, 12:30–12:45, H18

Microscopic origin of the electronic reconstruction at the LaAlO3/SrTiO3 interface — •Andrea Rubano1, Domenico Paparo2, Antigone Marino2, Paolo Perna2, Umberto Scotti di Uccio2, Fabio Miletto Granozio2, Christoph Richter3, Stefan Paetel3, Jochen Mannhart3, Lorenzo Marrucci2, and Manfred Fiebig11HISKP, Universitaet Bonn, Bonn, Germany — 2CNR-INFM Coherentia and Dip. di Scienze Fisiche, Università di Napoli Federico II, Italy — 3Center for Electronic Correlations and Magnetism, Institute of Physics, University of Augsburg, Germany

LaAlO3/SrTiO3 interfaces are one of the most challenging topics in the field of perovskite oxides. Recently it was observed that a conductive two-dimensional electron gas (2DEG) emerges at the interface of these wide-gap insulators. The 2DEG formation occurs once n≥4 LaAlO3 monolayers are deposited on top of the SrTiO3. Although some macroscopic models have been proposed, our understanding on the microscopic scale is still at its infancy. Second harmonic (SHG) spectroscopy is an interface-only sensitive technique and, thus, an ideal tool to study these materials. Applying SHG, we demonstrate that a structural reorganization of the interfacial Ti-orbitals already occurs at n=3, yet without any onset of conductivity, because the injected carriers are localized at the interface. The electronic reorganization at n=3 leads to an abrupt increase of the SHG yield due to the enhancement of the polar asymmetry of the Ti 3d orbitals, and a crystal field splitting of the d(xy) orbitals is observed.

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