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Regensburg 2010 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 19: CE: Metal-Insulator Transition 2

TT 19.12: Talk

Wednesday, March 24, 2010, 12:45–13:00, H18

Electronic reconstruction in thin LaAlO3 films on SrTiO3(001) via a SrTiO3-capping layer — •Katrin Otte1, Rossitza Pentcheva1, and Warren E. Pickett21Section Crystallography, Dept. of Earth and Environmental Sciences, University of Munich — 2Department of Physics, UC Davis

Novel electronic phenomena can be realized at the interface between polar (e.g. LaAlO3) and nonpolar (e.g. SrTiO3) band insulators. An intriguing example is the thickness dependent insulator-to-metal transition in thin LaAlO3 films on SrTiO3(001)[1]. Density functional theory calculations show that a strong lattice polarization allows several layers of LaAlO3 on SrTiO3(001) to remain insulating before an insulator-to-metal transition takes place at around 4 monolayers (MLs)[2]. We demonstrate here that an additional capping SrTiO3 can trigger the electronic reconstruction already at two MLs of LaAlO3. A surface O 2p state, similar to the surface states in SrTiO3, is identified as the origin of this additional band shift.

Altogether, the SrTiO3-capping layer represents an alternative pathway to tune the electronic reconstruction of the system leading to the formation of an electron-hole bilayer.

[1] S. Thiel et al., Science 313, 1942 (2006).

[2] R. Pentcheva and W.E. Pickett, Phys. Rev. Lett. 102, 107602 (2009).

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