Regensburg 2010 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
TT: Fachverband Tiefe Temperaturen
TT 37: MLT: Poster Session
TT 37.27: Poster
Thursday, March 25, 2010, 14:00–18:00, Poster A
Quasi-continuous generation of structual defects in graphene — •Verena Martin, Michael Krieger, Johannes Jobst, Daniel Waldmann, and Heiko B. Weber — Universität Erlangen-Nürnberg, Staudtstr. 7, 91058 Erlangen
High-quality epitaxal graphene at low temperatures has metallic conductivity. This regime can be destroyed by the generation of structual defects. In our experiment, we carry out resistance measurements at low temperatures (T ∼ 4 K) and slowly increase the amount of disorder by ion bombardement in situ. The implantation dose can be limited down to ∼ 100 per µ m2 ion impacts per implantation step. An increase of the resistance by several orders of magnitude with increasing implantation dose is found. The transition between the metallic and the insulating regime is discussed.