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BP: Fachverband Biologische Physik
BP 12: Posters: New Technologies
BP 12.11: Poster
Monday, March 14, 2011, 17:15–20:00, P3
Electrical characterization of single nanopores in 30 nm thick silicon membranes — •Vedran Bandalo1, Yael Liebes2, Nurit Ashkenasy2, and Marc Tornow1 — 1Institut für Halbleitertechnik, TU Braunschweig, Germany — 2Ben-Gurion University of the Negev, Beer Sheva, Israel
We present the fabrication of silicon nanopore devices and their electrical characterization for DNA translocation measurements. The devices are based on Silicon-On-Insulator (SOI) substrates, where a 30-50 nm thick Si membrane is released using highly anisotropic reactive ion etching, followed by direct pore drilling using a novel FEBIE (focused electron beam induced etching) process. We measured the ionic conductance through individual pores in 100 mM KCl electrolyte solution at a typical noise level of about 3,7 pA RMS and 37 pA p-p, at 100 mV bias. The observed, approximately linear current-voltage characteristics with resistances in the range of 140 to 160 MΩ correspond to pore diameters of about 20 nm, according to a simple cylindrical shape model for the pore and in good agreement with the diameter measured by SEM. Furthermore, first results of the translocation of lambda-DNA through the Si nanopores, as well as novel concepts for integrating an Ag/AgCl electrode on-chip, in a closed cavity-like nanopore device, will be presented.