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DF: Fachverband Dielektrische Festkörper

DF 13: Electrical and mechanical properties

DF 13.2: Talk

Thursday, March 17, 2011, 10:35–10:55, MÜL Elch

PVD grown high-k SrTiO₃ for capacitor applications: reliability and leakage current behavior — •Steve Kupke¹, Uwe Schröder¹, Steve Knebel¹, Sebastian Schmelzer², Ulrich Böttger², and Thomas Mikolajick¹ — ¹NaMLab gGmbH, Nöthnitzer Straße 64, D-01187 Dresden, Germany — ²Institut für Werkstoffe der Elektrotechnik 2, RWTH Aachen University, Sommerfeldstraße 24, D-52074 Aachen, Germany

Low rate rf-sputtering was used to grow a 12 nm SrRuO₃/SrTiO₃/ SrRuO₃ thin film capacitor with high dielectric constant and low leakage current behavior [1]. Leakage current analysis and time dependent dielectric breakdown (TDDB) measurements as a function of temperature were performed. Poole-Frenkel emission and trap assisted tunneling were found to explain the leakage current behavior at different electric field ranges. Shallow trap levels between 0.75 - 0.85 eV below the conduction band were found whereas at higher temperatures conduction is governed by deeper traps at 1.2 eV. Constant voltage stress (CVS) measurements indicate that electron trapping is predominant and stress induced leakage current occurs before hard breakdown. Based on the Weibull model a projected lifetime of several years was obtained at product conditions. The high lifetime in combination with a high effective permittivity of approximately 200 making it a promising candidate for future DRAM applications.

[1] S. Schmelzer et al., Appl. Phys. Lett. 97, 132907 (2010)