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DF: Fachverband Dielektrische Festkörper

DF 2: Nonlinear dielectrics, phase transitions, relaxors

DF 2.2: Vortrag

Montag, 14. März 2011, 11:20–11:40, KÖN Farb

Effect of the substrate on the insulator-metal transition of vanadium dioxide films — •Gyoergy Kovacs, Danilo Buerger, Ilona Skorupa, Helfried Reuther, and Heidemarie Schmidt — HZDR, Dresden-Rossendorf

Vanadium dioxide is a potential candidate for on-chip memristive applications due to its hysteretic insulator-metal transition, which can be triggered by electronic pulses. Therefore it is interesting to investigate the details of the growth of VO2 on different substrates to see how the film structure and the electronic properties [1] depend on the underlying substrate. Here we show that single-phase vanadium dioxide films grown on (0001) sapphire and (001) silicon show a very different hysteretic insulator-metal electronic transition. The reason for this difference is that (tri-)epitaxy-stabilized columnar growth of VO2 takes place on the sapphire substrate, while on silicon the expected Zone II growth is identified [2]. The former ensures high crystalline quality so a narrow and high amplitude hysteresis loop, while in the latter case material transport between the substrate and the growing film alters the structure, resulting in a wider and lower amplitude hysteresis loop.

[1] V. A. Klimov, I. O. Timofeeva, S. D. Khanin, E. B. Shadrin, A. V. Ilinskii, and F. Silva-Andrade, Technical Physics 47, 1134 (2002). [2] György J. Kovács, D. Bürger, I. Skorupa, H. Schmidt, submitted