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DF: Fachverband Dielektrische Festkörper
DF 3: Dielectric and ferroelectric thin films 2
DF 3.6: Talk
Monday, March 14, 2011, 16:50–17:10, MÜL Elch
Electrical properties of ultrathin CaTiO3 layers in MIM capacitor stacks — Andreas Krause1, •Walter M. Weber1, Uwe Schroeder1, Johannes Heitmann1,2, and Thomas Mikolajick1,3 — 1NaMLab gGmbH, Noethnitzer Strasse 64, D-01187 Dresden — 2Institut fuer Angewandte Physik, TU Bergakademie Freiberg — 3Institut fuer Halbleiter- und Mikroelektronik IHM, TU Dresden, Noethnitzer Strasse 64, D-01187 Dresden
CaTiO3 is a promising material for high-k dielectric applications in metal-insulator-metal capacitors, combining a high dielectric constant (k) with low leakage current values. CaTiO3 was deposited by rf-sputtering at different deposition temperatures. The dielectric constants and leakage current properties were optimized by improvement of the bottom electrode material and roughness. k-values between 51 and 180 were reached depending on the degree of crystallinity of the CaTiO3 layer. The electrical results correlate well with the structural properties. The reduced leakage current values for the lower k samples are associated with the passivation of the grain boundaries in an amorphous matrix, while the leakage current for completely crystallized films is the result of conduction along the grain boundaries [1].
[1] A. Krause et al., Evaluation of the electrical and physical properties of thin calcium titanate high-k insulators for capacitor applications, JVST B accepted