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DF: Fachverband Dielektrische Festkörper

DF 3: Dielectric and ferroelectric thin films 2

DF 3.7: Talk

Monday, March 14, 2011, 17:10–17:30, MÜL Elch

Piezoelectric properties of BNT-BT epitaxial thin films by laser interferometry — •Mehrdad Baghaie Yazdi^1,2, Wook Jo¹, Philipp Komissinskiy¹, Pavel Klang², Joachim Hillenbrand¹, Robert Schafranek¹, Jürgen Rödel¹, and Lambert Alff¹ — ¹Technische Universität Darmstadt — ²Technische Universität Wien

The need for environmental friendly, non-hazardous materials have motivated the scientific community to increase their efforts in the development of lead free piezoceramics, as the electronic market faces an ever increasing need for such devices. Thin films of such a promising lead free piezoceramic, (1-x)Bi_0.5Na_0.5TiO₃·xBaTiO₃ for x=0.6 , have been deposited using pulsed laser deposition (PLD) on 5% niobium doped SrTiO₃(STO:Nb) substrates. The lattice constant of the films was determined using high resolution X-ray diffraction. Out of plane measurements, c=3.89 Å, suggest the growth of a highly epitaxial cubic phase (a=3.90 Å) on STO:Nb (a=3.905 Å). The piezoelectric properties have been studied using an unconventional approach, namely laser interferometry, allowing the determination of d₃₃ in the frequency range from 1 kHz to 1 MHz.