Dresden 2011 – scientific programme
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DF: Fachverband Dielektrische Festkörper
DF 4: Multiferroics I (Joint Session of MA, DF, DS, KR, TT)
DF 4.8: Talk
Monday, March 14, 2011, 16:30–16:45, HSZ 04
New design for magnetoelectric switch from first principles — •Michael Fechner1, Peter Zahn2, Sergey Ostanin1, and Ingrid Mertig1,2 — 1Max-Planck-Institut für Mikrostrukturphysik Halle, Germany — 2Fachgruppe Theoretische Physik, Martin-Luther-Universität Halle-Wittenberg
Saving information in a magnetic bit requires at least two stable magnetic states that can be distinguished. In conventional hard disks two opposite directions of the magnetization provide these two states. The magnetic state is changed by an external magnetic field thus writing information, whereas reading is performed by the usage of the GMR effect (giant magnetoresistance) [1]. Based on ab intio material design we propose a new hybrid magnetoelectric that allows this switching of the magnetic states by an applied electric field instead of the magnetic field. The switching in the proposed multilayer system is based on internal electronic couplings without any strain. Thus, it is a promising candidate for application in future magnetoresistive random access memory (MRAM).
[1] Baibich et al., PRL 61, 2472-2475, (1988)