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DF: Fachverband Dielektrische Festkörper
DF 9: High-k and Low-k Dielectrics (Joint Session of DS, DF)
DF 9.1: Talk
Tuesday, March 15, 2011, 13:45–14:00, GER 38
Nondestructive Hard X-ray Photoelectron Spetroscopy Study of Resistive Switching TiN/Ti/HfO2/TiN RRAM Cells — •Małgorzata Sowińska1, Sebastian Thiess2, Christian Walczyk1, Damian Walczyk1, Christian Wenger1, Mindaugas Lukosius1, Wolfgang Drube2, and Thomas Schroeder1 — 1IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany — 2P09 beamline at Petra III (DESY), Notkestrasse 85, 22607 Hamburg, Germany
Resistive switching metal-insulator-metal (MIM) diodes present a promising approach for back-end-of-line (BEOL) integration of embedded nonvolatile memory (NVM) cells in Si integrated circuits. Research in our group focused on TiN/Ti/HfO2/TiN devices and one-resistor (1R) as well as one-transistor, one-resistor (1T1R) architectures were successfully processed under Si CMOS BEOL conditions. Switching characteristics in sweep as well as pulse mode were electrically investigated to study NVM characteristics (retention, endurance etc.). To unveil the microscopic origin of the switching mechanism, the Ti/HfO2 interface was studied by nondestructive Hard X-ray Photoelectron Spectroscopy (HAXPES) studies at the recently constructed P09 beamline at Petra III (Hamburg). Results on RRAM cells in as-deposited, ON and OFF, as well as hard breakdown state will be presented.