Dresden 2011 – wissenschaftliches Programm
DS 12.2: Vortrag
Montag, 14. März 2011, 17:30–17:45, GER 38
Atomic layer deposition of TiO2 — •Massimo Tallarida, Nils Deßmann, Matthias Städter, Daniel Friedrich, Marcel Michling, and Dieter Schmeißer — BTU-Cottbus, Konrad-Wachsmann-Allee 17, 03046 Cottbus, Germany
We present a study of the initial growth of TiO2 on Si(111) by atomic layer deposition (ALD). The Si substrate was etched with NH4F before ALD to remove the native oxide film and to produce a Si-H termination. In−situ experiments by means of photoemission and X-ray absorption spectroscopy were conducted with synchrotron radiation on Ti-oxide films produced using Ti-tetra-iso-propoxide (TTIP) and water as precursors. O1s, Ti2p, C1s, and Si2p core level, and O1s and Ti2p absorption edges show the transition of the Ti-oxide properties during the first layers. The growth starts with a very small growth rate (0.03nm/cycle) due to the growth inhibition of the Si-H termination and proceeds with higher growth rate (0.1nm/cycle) after 1.5nm Ti-oxide has been deposited.