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DS: Fachverband Dünne Schichten
DS 2: Thin Film Chalcogenide Photovoltaics I (Focused Session -- Organiser: Ronning)
DS 2.2: Topical Talk
Montag, 14. März 2011, 11:30–12:00, GER 37
Efficient Photovoltaic Devices using Multinary Chalcogenide Semiconductors — •Hans-Werner Schock and Thomas Unold — Helmholtz Zentrum Berlin für Materialien und Energie, Hahn-Meitner Platz 1, 14109 Berlin, Germany
Multinary compounds like Cu(In,Ga)S,Se2 are very promising materials for thin film solar cells currently reaching photoconversion efficiencies beyond 20 % for small device areas. The tolerance of chalcopyrite semiconductors regarding grain structure and defects allows to fabricate Cu(In,Ga)Se2 thin films with a variety of deposition technologies and significant differences in the growth parameters and composition. In the long term, modifications of materials and devices are needed in order to overcome limitations by the use of rare elements e.g replacing indium by the combination of a group II and a group IV element to form the kesterite compound Cu2ZnSnS4. Advanced methods for film characterisation facilitate the analysis of such new materials, also in-situ during film growth. The combination of analytical methods based on x-ray methods, electron beams and optical and electrical spectroscopy give insights in the microstructure and related electronic properties of the absorber films. Due to the large degrees of freedom in multinary materials, analysis and control of structural and electronic inhomogeneities is essential to reach efficient photoconversion.