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DS: Fachverband Dünne Schichten

DS 20: Application of Thin Films

DS 20.3: Vortrag

Dienstag, 15. März 2011, 10:45–11:00, GER 38

Coexistence of filamentary and homogeneous resistive switching in Fe-doped SrTiO₃ thin film memristive devices — Ruth Münstermann¹, •Regina Dittmann¹, Tobias Menke¹, Ingo Krug¹, Daesung Park², Joachim Mayer², and Rainer Waser^1,3 — ¹Peter Grünberg Institut, Research Centre Jülich — ²Central Faculty for Electron Microscopy, RWTH Aachen — ³Institut fuer Werkstoffe der Elektrotechnik 2, RWTH Aachen

Resistive switching phenomena which are observed in many transition metal oxides are under consideration for future non-volatile memories (so called memristive devices). We used conductive-tip AFM combined with a delamination technique to remove the top electrode of Fe-doped SrTiO₃ memristive devices to gain insights into the active switching interface. We observed that resistive switching in Fe-doped SrTiO₃ thin films can be either confined to a single strong filament or distributed over larger areas beneath the electrode, in the ideal case the whole junction area. Both types of switching coexist in one and the same sample and exhibit the opposite switching polarity. Combining our electrical date with PEEM and HRTEM analysis, we discuss the nature of the observed switching phenomena.