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DS: Fachverband Dünne Schichten

DS 22: Focussed Session: Inorganic/Organic Semiconductor Hybrid Structures I (jointly with HL and O)

DS 22.4: Invited Talk

Tuesday, March 15, 2011, 12:00–12:30, POT 151

The incorporation of metal nanostructures at organic/inorganic semiconductor interfaces — •Dietrich RT Zahn, Michael Ludemann, Ovidiu Gordan, Philipp Schäfer, and Georgeta Salvan — Semiconductor Physics, Chemnitz University of Technology, 09107 Chemnitz

Raman spectroscopy is applied in situ and online to study the interface formation of organic semiconductors such as perylene derivatives and phthalocyanines on inorganic semiconductor like gallium arsenide and silicon. Moreover, also the interface formation between metals and organic semiconductors has been extensively investigated. In the latter case the surface enhanced Raman scattering (SERS) effect is observed and it provides useful information regarding e.g. metal reactivity and metal diffusion. More recently well defined metal nanostructures were prepared on oxidised silicon samples using nanosphere lithography. When organic molecules are deposited onto such structured substrates strong enhancement effects are again observed. However, the enhancement effect shows an unusual resonance behaviour at excitation wavelengths well away from the metal cluster plasmon energy. The potential of such structures for application will be illuminated.