Dresden 2011 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 23: Focussed Session: Inorganic/Organic Semiconductor Hybrid Structures II (jointly with HL and O)

DS 23.2: Hauptvortrag

Dienstag, 15. März 2011, 14:45–15:15, POT 151

Organic layers on Si, SiC, and diamond substrates: structural and electronic properties — •Martin Stutzmann, Ian D. Sharp, Jose Antonio Garrido, and Martin S. Brandt — Walter Schottky Institut, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany

In this contribution, we address the structural and electronic properties of hybrid heterostructures of organic functional layers on silicon, silicon carbide, and diamond substrates. For the covalent grafting of alkenes or phenyls on H- or OH-terminated surfaces, distinct differences in the reactivity of the different substrates and the quality of the resulting self-assembled monolayers are observed. These surfaces can be further functionalized with proteins such as enzymes or photosystems to investigate charge transfer processes between the solid substrate and the bioorganic layer. In addition, we have investigated the electronic properties of thin films of P3HT or pentacene deposited on Si, SiC, and diamond by spin coating or organic MBE. Based on current-voltage characteristics of such heterojunctions in the dark and under illumination we discuss basic questions of band alignment and charge transfer at the different heterointerfaces.