Dresden 2011 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 40: Organic Electronics and Photovoltaics HL-II (jointly with CPP, HL, and O)

DS 40.12: Vortrag

Mittwoch, 16. März 2011, 13:15–13:30, FOE Anorg

Charge transport measurements by transient techniques and their detailed evaluation — •Jens Lorrmann¹, David Vocke¹, Carsten Deibel¹, and Vladimir Dyakonov^1,2 — ¹Experimental Physics VI, Physical Institute, Julius-Maximilian-University of Würzburg — ²Bavarian Center for Applied Energy Research e.V. (ZAE Bayern e.V.), Würzburg

The charge carrier transport in pristine poly(3-hexyl thiophene-2,5-diyl) (P3HT) of different regioregularities and in blends with [6,6]-phenyl-C₆₁ butyric acid methyl ester (PCBM) was investigated by time-of-flight measurements (TOF). We investigate the field and temperature dependence of hole and electron mobilities down to temperatures of 130 K in order to understand the effects of the transport on the solar cell efficiency. The results from the TOF measurements are compared with the outcome of complementary methods like charge extraction by linearly increasing voltage (CELIV) and field effect transistor measurements. We calculate the disorder parameters from the temperature and field dependencies of the charge mobility using a Gaussian disorder transport formalism. Furthermore, we present the detail evaluation of TOF current transients with an improved method by Scott et al. [1], which provides explicit distributions of the transit times and the mobilities instead of discrete values.
[1] J.C. Scott, L.T. Pautmeier and L.B. Schein, Mean mobilities of charge carriers in disordered media, Phys. Rev. B 46:8603, 1992